DEPENDENCE OF BAND GAP ON DEPOSITION PARAMETERS IN CdSe SINTERED FILMS
نویسندگان
چکیده
II-VI semiconductors form an important class of opto-electronic materials. CdSe is a promising material for the fabrication of photovoltaic devices. Polycrystalline CdSe films have been deposited onto ultra clean glass substrates by sintering process. The optical band gap of these films was determined by reflectance measurements in wavelength range 400-850 nm. The band gap of these films was observed to increase with increase in sintering temperature and sintering time separately. The crystal structure and lattice parameter of these films were determined from x-ray diffractograms. The films were polycrystalline in nature having cubic zinc blende structure.
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